Product Description

CM50DY12H DISCONTINUED BY MANUFACTURER IGBT MODULE 600V 50A COLLECTOR EMITTER VOLTAGE-600V POWER DISSIPATION PD-250W The CM50DY12H is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for efficient power switching and control in industrial applications. With a maximum collector-emitter voltage of 1200V and a rated current of 50A, this module is engineered to handle significant power loads while ensuring reliable operation. Its advanced thermal management features and robust construction make it suitable for use in motor drives, inverters, and other power conversion systems that demand high performance and durability. The CM50DY12H’s compact design and high switching efficiency contribute to its suitability for demanding power electronics applications.

Technical Specifications

• Type: IGBT Module
• Model: CM50DY12H
• Collector-Emitter Voltage (Vceo): 1200V
• Rated Current (Ic): 50A
• Max Power Dissipation: 200W
• Package Type: Half-bridge module
• Thermal Resistance (J-C): Typically 0.75°C/W
• Operating Temperature Range: -40°C to 150°C (-40°F to 302°F)
• Gate Drive Voltage: ±15V
• Features: Short-circuit protection, thermal protection
• Dimensions: Approximately 70 mm (W) x 100 mm (L) x 20 mm (H) (specific dimensions may vary)
• Weight: Approximately 0.5 kg (1.1 lbs) (specific weight may vary)
• Compliance: RoHS compliant