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Mitsubishi CM50E3Y-12E IGBTMOD E-Series Power Module 50 Amp, 600V CM50E3Y12E

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Product Description


The Mitsubishi CM50E3Y-12E is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power electronic applications. This module integrates a free-wheeling diode and utilizes microfine chip technology to deliver excellent thermal performance and high efficiency. It is optimized for variable-speed motor drives, offering low conduction and switching losses, making it suitable for use in inverters, uninterruptible power supplies (UPS), and other high-power systems.​



Technical Specifications


  • Model: CM50E3Y-12E
  • Type: IGBT Module
  • Manufacturer: Mitsubishi Electric
  • Collector-Emitter Voltage (V_CE): 600 V
  • Collector Current (I_C): 50 A
  • Gate-Emitter Voltage (V_GE): ±20 V
  • Operating Junction Temperature (T_j): -40°C to +150°C
  • Package Type: Module
  • Mounting: Isolation mounting with low thermal resistance
  • Features:
  • Integrated free-wheeling diode
  • High input impedance
  • Optimized for variable-speed motor drives
  • Enhanced performance with microfine chip technology
  • Applications: Motor drives, power converters, inverters, uninterruptible power supplies (UPS)
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