Product Description

The Mitsubishi QM50DX-H is an insulated-gate bipolar transistor (IGBT) module designed for medium-power switching applications in industrial equipment. It integrates both the IGBT and a freewheeling diode in a single package, providing efficient power conversion and motor control capabilities. With a collector-emitter voltage rating of 600V and a continuous collector current rating of 50A, it is well-suited for use in inverters, motor drives, and uninterruptible power supplies (UPS). The module features a compact design with high thermal efficiency, ensuring reliable performance in demanding environments.​

Technical Specifications

• Type: IGBT Module
• Configuration: Insulated type
• Collector-Emitter Voltage (Vce): 600V
• Collector Current (Ic): 50A
• Gate-Emitter Voltage (Vge): ±20V
• Thermal Resistance (Junction to Case, Rθjc): Low, supports effective heat dissipation
• Operating Temperature Range: -20°C to +125°C
• Package Type: Module
• RoHS Compliant: Yes​