Product Description

7MBR25VP12050 INSULATED GATE BIPOLAR TRANSISTOR 25A I(C) 1200V V(BR)CES N-CHANNEL The Fuji 7MBR25VP120-50 IGBT Module is a high-performance power semiconductor device designed to handle heavy loads in industrial applications. This IGBT (Insulated Gate Bipolar Transistor) module is known for its high switching speeds, low power loss, and thermal efficiency, making it an ideal component for motor control systems, inverters, and various power conversion equipment. The module features a six-pack configuration, integrating multiple IGBTs and diodes, enhancing operational reliability and performance in demanding environments.

Technical Specifications

• Model: 7MBR25VP120-50
• Type: IGBT Power Module
• Voltage Rating: 1200V
• Current Rating: 25A (Continuous)
• Configuration: Six-pack IGBT module with integrated freewheeling diodes
• Switching Frequency: Optimized for medium to high-frequency applications
• Isolation Voltage: 2500V (between terminals and heatsink)
• Power Dissipation: 130W
• Gate Drive Voltage: ±15V
• Package Type: Standard module design with screw terminals for secure electrical connections
• Mounting: Heatsink mountable for optimal thermal management
• Features:
• High Voltage and Current Capacity: Capable of handling up to 1200V and 25A, ideal for industrial-grade power systems.
• Integrated Protection: Built-in freewheeling diodes for enhanced circuit protection and efficient operation.
• Fast Switching: Supports fast switching speeds, reducing energy losses and improving efficiency.
• Efficient Thermal Design: Constructed to facilitate heat dissipation, ensuring stable performance even under continuous heavy loads.
• Applications: Motor drives, power inverters, renewable energy systems, industrial automation, and other high-power equipment.