Product Description

7MBR75U4B12050 DISCONTINUED BY MANUFACTURER INSULATED GATE BIPOLAR TRANSISTOR 75A I(C) 1200V V(BR)CES N-CHANNEL The Fuji 7MBR75U4B120-50 is a high-performance IGBT (Insulated Gate Bipolar Transistor) power module designed for efficient and reliable operation in various industrial and automation applications. This module is engineered to handle high voltages and currents, providing stable and efficient power conversion for demanding systems.

Technical Specifications

• Model: 7MBR75U4B120-50
• Type: IGBT Power Module
• Voltage Rating: 1200 V (DC Link voltage)
• Current Rating: 75 A (Continuous)
• Configuration: IGBT module with integrated freewheeling diodes for enhanced switching performance
• Package Type: Standard power module package
• Thermal Resistance: Designed for effective heat dissipation to maintain optimal performance
• Cooling Method: Requires external cooling or heat sinking to manage temperature
• Mounting Type: Typically mounted on a heatsink or within a standard power module chassis
• Features:
• High Efficiency: Provides efficient power conversion with minimal losses, ideal for high-power applications.
• Robust Design: Built to endure harsh industrial conditions and high-stress environments.
• Stable Performance: Ensures reliable operation in motor drives and other high-power electronic systems.
• Effective Thermal Management: Features designed to handle heat effectively, preventing overheating and maintaining system reliability.