Product Description

The Infineon BSM10GD120DN2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for demanding industrial applications. With a 1200 V collector-emitter voltage rating and a continuous collector current of 15 A at 25°C, it offers exceptional power handling capabilities. Utilizing Infineon's advanced IGBT technology, the module ensures low switching losses and high efficiency. Its robust design features a package with an insulated metal base plate, making it suitable for applications such as motor drives, uninterruptible power supplies (UPS), and other high-power industrial systems.

Technical Specifications

• Collector-Emitter Voltage (V_CE max): 1200 V
• Continuous Collector Current (I_C): 15 A at 25°C
• Pulsed Collector Current (I_CP): 30 A
• Power Dissipation (P_D): 80 W
• Collector-Emitter Saturation Voltage (V_CE(sat)): 2.7 V
• Gate-Emitter Voltage (V_GE): ±20 V
• Gate-Emitter Leakage Current (I_GE): 120 nA
• Input Capacitance (C_ies): 530 pF at 25 V
• Operating Junction Temperature (T_j): -40°C to +150°C
• Storage Temperature (T_stg): -40°C to +125°C
• Package Type: EconoPACK™ 2
• Number of Pins: 17
• Mounting Type: Screw
• Insulation Test Voltage: 2500 V (t = 1 min)
• Creepage Distance: 16 mm
• Clearance Distance: 11 mm