Product Description

The Infineon BSM35GP120G is a robust 1200 V, 35 A dual IGBT module designed for high-power applications requiring efficient switching and compact design. Utilizing Infineon's advanced Trench IGBT technology, this module offers optimized switching characteristics, including low saturation voltage and reduced switching losses. It features an integrated free-wheel diode, ensuring efficient operation. The module is housed in the 34 mm package, facilitating easy integration into various systems. With an operating temperature capability of up to +150°C, it is suitable for applications such as motor control, inverters, uninterruptible power supplies (UPS), and industrial heating systems. The BSM35GP120G is RoHS compliant, ensuring high reliability and compliance with international standards.​

Technical Specifications

• Part Number: BSM35GP120G
• Type: Dual IGBT Module
• Technology: Trench IGBT
• Voltage Rating (V_CEO): 1200 V
• Current Rating (I_C): 35 A
• Collector-Emitter Saturation Voltage (V_CE(sat)): 2.85 V (typical)
• Power Dissipation: 230 W
• Operating Temperature Range: -40°C to +150°C
• Package Type: 34 mm
• Gate Emitter Voltage (V_GE): ±20 V
• Thermal Resistance (junction to case): 0.35 K/W
• Thermal Resistance (case to heatsink): 0.10 K/W
• Weight: Approximately 0.31 kg
• Certifications: RoHS compliant