Product Description

The Infineon BSM50GD120DN2G is a high-performance 1200 V, 78 A IGBT module designed for demanding industrial applications. Utilizing Infineon's advanced NPT (Non-Punch Through) IGBT technology, this module offers optimized switching characteristics, including low saturation voltage and reduced switching losses. It features an integrated free-wheel diode, ensuring efficient operation. The module is housed in the EconoPACK 3A package, facilitating easy integration into various systems. With an operating temperature capability of up to +150°C, it is suitable for applications such as motor control, inverters, uninterruptible power supplies (UPS), and industrial heating systems. The BSM50GD120DN2G is RoHS compliant, ensuring high reliability and compliance with international standards.

Technical Specifications

• Part Number: BSM50GD120DN2G
• Type: IGBT Module
• Technology: NPT IGBT
• Voltage Rating (V_CEO): 1200 V
• Current Rating (I_C): 78 A
• Collector-Emitter Saturation Voltage (V_CE(sat)): 2.5 V (typical)
• Power Dissipation: 400 W
• Operating Temperature Range: -40°C to +150°C
• Package Type: EconoPACK 3A
• Gate Emitter Voltage (V_GE): ±20 V
• Thermal Resistance (junction to case): 0.35 K/W
• Thermal Resistance (diode junction to case): 0.7 K/W
• Insulation Test Voltage: 2500 V
• Creepage Distance: 16 mm
• Clearance: 11 mm
• Weight: Approximately 0.45 kg
• Certifications: RoHS compliant​