Product Description

The Infineon FF200R12KE3-B2 is a high-performance 1200 V, 200 A dual IGBT module designed for demanding industrial applications. Utilizing Infineon's advanced TRENCHSTOP™ IGBT3 technology, this module offers optimized switching characteristics, including low saturation voltage and reduced switching losses. It features an integrated emitter controlled high-efficiency diode, ensuring efficient operation. The module is housed in the IS5a (62 mm) package, facilitating easy integration into various systems. With an operating temperature capability of up to +150°C, it is suitable for applications such as motor control, inverters, uninterruptible power supplies (UPS), and industrial heating systems. The FF200R12KE3-B2 is RoHS compliant, ensuring high reliability and compliance with international standards.​

Technical Specifications

• Part Number: FF200R12KE3-B2
• Type: Dual IGBT Module
• Technology: TRENCHSTOP™ IGBT3
• Voltage Rating (V_CEO): 1200 V
• Current Rating (I_C): 200 A
• Collector-Emitter Saturation Voltage (V_CE(sat)): 1.7 V (typical)
• Power Dissipation: 1.05 kW
• Operating Temperature Range: -40°C to +150°C
• Package Type: IS5a (62 mm)
• Gate Emitter Voltage (V_GE): ±20 V
• Thermal Resistance (junction to case): 0.35 K/W
• Thermal Resistance (case to heatsink): 0.10 K/W
• Weight: Approximately 0.33 kg
• Certifications: RoHS compliant​