Product Description

FP50R12KT4 DISCONTINUED BY MANUFACTURER INSULATED GATE BIPOLAR TRANSISTOR 50A I(C) 1200V V(BR)CES N-CHANNEL The Infineon FP50R12KT4 is a highly efficient IGBT module tailored for medium-power industrial applications such as motor drives, power inverters, and uninterruptible power supplies (UPS). Utilizing Infineon's advanced IGBT4 technology, it ensures minimal power loss and high switching efficiency, making it ideal for demanding applications. With a compact and reliable design, the FP50R12KT4 is optimized for long-term operational stability in harsh environments. Its low-inductance layout reduces electromagnetic interference (EMI), ensuring smooth and reliable performance in various industrial settings.

Technical Specifications

• IGBT Technology: IGBT4 (Trench Field Stop)
• Collector-Emitter Voltage (Vces): 1200V
• Continuous Collector Current (Ic): 50A (at 25°C)
• Power Dissipation: 250W
• Gate Threshold Voltage (Vge): ±20V
• Operating Junction Temperature: -40°C to +150°C
• Switching Frequency: 0.5 to 20 kHz
• Isolation Voltage: 2.5 kV (AC, 1 minute)
• Package Type: EconoPACK™
• Dimensions: 89 x 38 x 17 mm