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Product Description
The Mitsubishi CM150DU-24F is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for efficient power switching applications. It features a half-bridge configuration with trench gate design, integrating two IGBT transistors and their associated diodes within a single module. This design simplifies system assembly and enhances thermal management by isolating components from the heat-sinking baseplate.
Technical Specifications
- Type: Trench Gate Design Dual IGBT Module
- Configuration: Half Bridge
- AvaQ
- +4
- DigiKey
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- Xecor
- +4
- Collector-Emitter Voltage (V_CES): 1200 V
- AvaQ
- +9
- DigiKey
- +9
- Xecor
- +9
- Collector Current (I_C): 150 A
- Manual Machine
- +1
- ALLDATASHEET.COM
- +1
- Maximum Power Dissipation (P_C): 600 W
- Manual Machine
- +4
- AvaQ
- +4
- DigiKey
- +4
- Collector-Emitter Saturation Voltage (V_CE(sat)) at V_GE = 15 V, I_C = 150 A: 2.4 V
- AvaQ
- +2
- Manual Machine
- +2
- DigiKey
- +2
- Collector Cutoff Current (I_CEO): 1 mA
- Input Capacitance (C_ies) at V_CE = 10 V: 59 nF
- Operating Junction Temperature (T_j): -40°C to 150°C
- Xecor
- +2
- Y-IC
- +2
- AvaQ
- +2
- Storage Temperature (T_stg): -40°C to 125°C
- Y-IC
- Isolation Voltage: 2500 V AC for 1 minute
- AvaQ
- +4
- ALLDATASHEET.COM
- +4
- IC Components
- +4
- Mounting Type: Chassis Mount
- DigiKey
- +1
- IC Components
- +1
- Package: Module
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