Product Description

​The Mitsubishi CM150TL-24NF is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for efficient power switching in industrial applications. It features a six-pack (full bridge) configuration, integrating six IGBT elements within a single module, simplifying system design and enhancing thermal management. ​

Technical Specifications

• Type: N-Channel IGBT Module​
• Configuration: Six-Pack (Full Bridge)​
• Newark
• Collector-Emitter Voltage (V_CES): 1200 V​
• Collector Current (I_C): 150 A​
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• Collector-Emitter Saturation Voltage (V_CE(on)) at V_GE = 15 V, I_C = 150 A: Up to 3 V​
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• Gate-Emitter Voltage (V_GE): ±20 V​
• Gate-Emitter Leakage Current (I_GE): Up to 0.5 µA​
• Maximum Power Dissipation (P_C): 890 W​
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• Newark
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• Operating Junction Temperature (T_j): -40°C to 150°C​
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• Newark
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• Storage Temperature (T_stg): -40°C to 125°C​
• Isolation Voltage: 2500 V AC for 1 minute​
• Mounting Type: Chassis Mount​
• Package: Module​
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• Features:
• Low collector-emitter saturation voltage​
• High collector current capability​
• Integrated six-pack configuration for simplified design​
• Isolated baseplate for effective heat sinking​
• Gate-Emitter voltage protection​
• Applications:
• AC motor control​
• Motion and servo control​
• Radwell
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• datasheets.com
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• Uninterruptible power supplies (UPS)​
• Renewable energy systems