Product Description

CM400DU12F DISCONTINUED BY MANUFACTURER INSULATED GATE BIPOLAR TRANSISTOR 400A I(C) 600V V(BR)CES N-CHANNEL MODULE-7 The Mitsubishi CM400DU-12F Power Module is a robust and high-performance device designed for industrial power electronics applications. It features advanced IGBT (Insulated Gate Bipolar Transistor) technology to handle high power with excellent efficiency. This module supports high-speed switching and is capable of withstanding a maximum voltage of 1200V with a current rating of 400A, making it suitable for demanding motor drives and power conversion tasks. The CM400DU-12F is engineered for durability and reliability, featuring integrated protection against overcurrent and thermal overloads, ensuring stable operation in industrial environments.

Technical Specifications

• Model Number: CM400DU-12F
• Type: IGBT Power Module
• Voltage Rating: 1200V
• Current Rating: 400A (Continuous)
• Power Dissipation: Approximately 650W (per module)
• Switching Frequency: Up to 20 kHz (typical)
• Package Type: Dual IGBT with Diode
• Thermal Resistance (Junction-to-Case): 0.15°C/W
• Insulation Voltage: 2500V AC (Isolation)
• Operating Temperature Range: -40°C to 150°C (junction temperature)
• Dimensions (WxHxD): 130 mm x 130 mm x 25 mm
• Weight: Approx. 2.0 kg
• Mounting Type: Bolt-on
• Compliance: RoHS, UL