Product Description

​The Mitsubishi CM400DY-12NF is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for efficient power conversion and management in industrial applications. It features a half-bridge configuration, comprising two IGBT transistors, each equipped with a reverse-connected super-fast recovery free-wheel diode. This design ensures reliable operation and simplifies system assembly and thermal management, as all components and interconnects are isolated from the heat-sinking baseplate.

Technical Specifications

• Configuration: Half Bridge​
• Elcodis
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• Collector-Emitter Voltage (V_CE): 600V​
• Collector Current (I_C): 400A​
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• Peak Collector Current (I_CM): 800A​
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• Emitter Current (I_E): 400A​
• igbt-module.info
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• DigiKey
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• Peak Emitter Current (I_EM): 800A​
• Collector Dissipation (P_C): 1130W​
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• DigiKey
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• ic-components.com
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• Gate-Emitter Voltage (V_GE): ±20V​
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• igbt-module.info
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• Shunlongwei
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• Operating Junction Temperature (T_j): -40°C to 150°C​
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• Shunlongwei
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• Storage Temperature (T_stg): -40°C to 125°C​
• igbt-module.info
• Mounting Type: Chassis Mount​
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• igbt-module.info
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• Package/Case: Module​
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• ic-components.com
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• DigiKey
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• Weight: Approximately 400 grams​