Product Description

CM50MD112H DISCONTINUED BY MANUFACTURER INSULATED GATE BIPOLAR TRANSISTOR 50A I(C) 600V V(BR)CES N-CHANNEL The Mitsubishi CM50MD1-12H is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for use in three-phase converters and inverters. This module is engineered to handle high power applications with a rated voltage of 1200V and a maximum collector current of 50A, making it suitable for demanding industrial and power electronics applications. The CM50MD1-12H provides reliable and efficient switching performance, essential for converting and controlling high voltage and current in various power systems. Its robust design ensures durability and long-term stability, making it an ideal choice for high-power motor drives and other critical applications.

Technical Specifications

• Model: CM50MD1-12H
• Type: IGBT Module
• Rated Voltage: 1200V DC
• Rated Current: 50A (continuous)
• Max. Collector-Emitter Voltage (Vce): 1200V
• Max. Collector Current (Ic): 50A
• Type of Module: Three-phase inverter
• Cooling Method: Heat sink required (air-cooled or liquid-cooled depending on application)
• Insulation Resistance: ≥ 10 MΩ (at 500V DC)
• Operating Temperature Range: -40°C to 125°C (junction temperature)
• Package Type: Half-bridge module with standard mounting for heat sinks
• Dimensions: 92 mm (W) x 130 mm (L) x 20 mm (H)
• Weight: Approximately 0.8 kg
• Compliance: RoHS