Product Description

​The Mitsubishi J2-Q24A-E is an Insulated Gate Bipolar Transistor (IGBT) module designed for efficient power switching applications in industrial electronics. This module integrates high-efficiency IGBT technology with a free-wheeling diode, offering low conduction and switching losses, fast switching capabilities, and robust performance under varying electrical conditions. Its compact, rectangular design with an integrated heat sink ensures effective thermal management, making it suitable for applications such as industrial motor drives, power supplies, renewable energy systems, and welding equipment.

Technical Specifications

• Type: IGBT Module​
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• Manufacturer: Mitsubishi Electric Semiconductor​
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• Model Number: J2-Q24A-E​
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• Features:
• High-efficiency IGBT technology​
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• Low conduction and switching losses​
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• Fast switching capabilities​
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• Integrated free-wheeling diode​
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• Performance:
• Stable temperature characteristics​
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• Low thermal resistance​
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• Robust against electrical fluctuations​
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• Applications:
• Industrial motor drives​
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• Power supplies​
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• Renewable energy systems​
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• Welding equipment​
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• Dimensions: Specific dimensions are available in the datasheet.​
• Packaging: Typically provided in anti-static packaging, such as boxes or tubes.​
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• Warranty: A standard 2-year warranty is offered, though terms may vary by distributor. ​