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Product Description
MG75J6ES50 DISCONTINUED BY MANUFACTURER POWER TRANSISTOR IGBT SILICON N CHANNEL PRICE/EA The MG75J6ES50 is a high-power IGBT (Insulated Gate Bipolar Transistor) module from Mitsubishi, designed for efficient switching in industrial applications such as motor control, power inverters, and welding equipment. It combines the high-speed switching of a MOSFET with the high-current and low-saturation voltage capability of a bipolar transistor. The module's robust design ensures reliable operation in demanding environments, providing excellent thermal management and durability.
Technical Specifications
- Type: IGBT Module
- Rated Current: 75A
- Rated Voltage: 600V
- Insulation Voltage: 2500V AC (1 minute)
- Power Dissipation: 330W
- Collector-Emitter Saturation Voltage: 2.0V
- Operating Temperature Range: -40°C to 150°C
- Mounting Type: Screw mount
- Package: Module package with insulated base
- Applications: Motor drives, power inverters, welding machines, industrial power supplies
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Additional Information
Shipping Information
Free Shipping On All Orders. Most Products Ship From The US And Are Delivered Within 3-7 Days. Contact Phone Support or Sales For Overnight And 2 Day Shipping Options.
Warranty Information
All Products Come With PLG Automation's 1-Year Warranty.
Payment Method
We only accept online payments such as Visa, Mastercard, American Express, Discover, & PayPal. All payments are entirely secured.
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