Product Description

​The Mitsubishi PM20CEF060-5 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module designed for efficient power switching applications. It features a half-bridge configuration, offering a collector-emitter voltage rating of 600V and a collector current capacity of up to 20A. This module is well-suited for applications such as motor drives, inverters, and uninterruptible power supplies (UPS), where reliable and efficient power conversion is essential.​

Technical Specifications

• Manufacturer: Mitsubishi​
• Model Number: PM20CEF060-5​
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• Type: IGBT Module​
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• Configuration: Half-Bridge​
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• Collector-Emitter Voltage (V_CE): 600V​
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• Collector Current (I_C): 20A​
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• Peak Collector Current (I_CP): 20A​
• Collector Dissipation (P_C): 39W​
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• Operating Junction Temperature (T_j): -20°C to 150°C​
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• Storage Temperature (T_stg): -40°C to 125°C​
• Case Operating Temperature (T_C): -20°C to 100°C​
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• Mounting Torque (M4 Mounting Screws): 0.98 to 1.47 N·m​
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• Module Weight: Approximately 60 grams​