Product Description

QM150DYH DISCONTINUED BY MANUFACTURER TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE 150A 600V VCEX 75VDC GAIN HFE APPLICATION INVERTERS SERVO DRIVES DC MOTOR CONTROLLERS NC EQUIPMENT WELDERS The QM150DY-H is a high-performance, rugged IGBT (Insulated Gate Bipolar Transistor) module from Mitsubishi Electric, designed for use in power conversion and industrial applications. With a rated current of 150A, this module is ideal for demanding environments where high efficiency and reliability are required. It features low saturation voltage and high-speed switching capabilities, ensuring effective and efficient power control. The QM150DY-H is commonly used in motor drives, power supplies, and other high-power electronic applications, providing robust performance and durability.

Technical Specifications

• Model: QM150DY-H
• Type: IGBT module
• Collector-Emitter Voltage (Vce): 600V
• Continuous Collector Current (Ic): 150A
• Pulse Collector Current (Icp): 300A
• Gate-Emitter Voltage (Vge): ±20V
• Saturation Voltage (Vce(sat)): 2.0V (typical)
• Power Dissipation: 300W
• Switching Speed: High-speed switching capability
• Package Type: Dual IGBT module
• Operating Temperature: -40°C to +150°C
• Dimensions (W x H x D): Approximately 95 mm x 77 mm x 35 mm
• Weight: Approximately 0.5 kg