Product Description

QM150DYHB TRANSISTOR MODULE INSULATED 150A 600V The Mitsubishi QM150DY-HB is a high-quality power transistor module designed for efficient switching and amplification in industrial applications. This insulated semiconductor module features a robust construction for reliable performance in demanding environments. It provides high current handling capabilities and excellent thermal management, making it ideal for use in power conversion systems, motor drives, and other high-power applications. The QM150DY-HB's design ensures stable operation and durability, contributing to the overall reliability and efficiency of industrial power systems.

Technical Specifications

• Model: QM150DY-HB
• Type: Power Transistor Module (Insulated Semiconductor)
• Configuration: Triple IGBT (Insulated Gate Bipolar Transistor)
• Rated Voltage: 600V
• Rated Current: 150A
• Collector-Emitter Saturation Voltage (V_CE(sat)): Typically 2.4V at 75A
• Power Dissipation: 500W (per module)
• Switching Frequency: Up to 20 kHz
• Thermal Resistance (Junction-to-Case): 0.25°C/W
• Insulation Voltage: 2500V AC
• Package Type: Insulated base with screw mounting
• Operating Temperature Range: -20°C to 125°C
• Dimensions: Approximately 140 mm x 85 mm x 50 mm (dimensions may vary slightly)
• Weight: Approximately 1.2 kg
• Features: High current handling, efficient thermal management, durable insulation
• Compliance: CE, RoHS