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Mitsubishi QM75DY-HB POWER TRANSISTOR MODULE INSULATED SEMICONDUCTOR
$ 92.00
Includes PLG Automations 1-Year Warranty
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Product Description
QM75DYHB DISCONTINUED BY MANUFACTURER TRANSISTOR HIGH POWER SWITCHING 75AMP 600V The QM75DY-HB is a high-performance IGBT module from Mitsubishi Electric, designed for efficient and reliable power switching in high-power applications. It is engineered to handle large currents and high voltages, making it suitable for use in motor drives, inverters, and power supplies. The QM75DY-HB features advanced semiconductor technology that provides low switching losses and high-speed operation, ensuring optimal performance and durability in demanding industrial environments.
Technical Specifications
- Model: QM75DY-HB
- Device type: IGBT (Insulated Gate Bipolar Transistor) module
- Collector-emitter voltage (Vceo): 600 V
- Maximum collector current (Ic): 75 A
- Gate-emitter voltage (Vge): ±20 V
- Maximum power dissipation: 450 W
- Switching frequency: Up to 10 kHz
- Thermal resistance (junction to case): 0.5 °C/W
- Package type: 7-pin flat package
- Operating temperature range: -40°C to 150°C
- Dimensions: 104 mm x 88 mm x 20 mm
- Weight: 0.5 kg
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Warranty Information
All Products Come With PLG Automation's 1-Year Warranty.
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