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Product Description
The BLF248 is a dual push-pull silicon N-channel enhancement-mode vertical D-MOS transistor, specifically designed for large signal amplifier applications in the VHF frequency range. Encapsulated in a 4-lead SOT262 A1 balanced flange package, it features two ceramic capacitors, with the mounting flange providing the common source connection for the transistors.
Technical Specifications
- Frequency Range: 10 MHz to 230 MHz
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- Nominal Output Power (P_L(1dB)): 300 W
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- Power Gain (G_p): 10 dB at 225 MHz with a drain-source voltage (V_DS) of 28 V
- Drain Efficiency (η_D): Approximately 65% under the same conditions
- Drain-Source Voltage (V_DS): 28 V
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- Quiescent Drain Current (I_Dq): 250 mA
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- Features:
- High power gain
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- Easy power control
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- Good thermal stability
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- Gold metallization ensuring excellent reliability
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- Applications:
- Large signal amplifier applications in the VHF frequency range
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Additional Information

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