Infineon FS100R12KE3_B3 FS100R12KE3-B3 Module Power Supply

Description:

FS100R12KE3B3 INSULATED GATE BIPOLAR TRANSISTOR 140A I(C) 1200V V(BR)CES N-CHANNEL Product Description The Infineon FS100R12KE3_B3 is a high-efficiency IGBT power module designed for industrial applications such as motor control, power inverters, and renewable energy systems. This module features Infineon’s third-generation IGBT technology, which provides excellent switching performance and reduced power losses. Its compact and robust design ensures long-term reliability in harsh industrial environments, making it a reliable choice for demanding applications. The FS100R12KE3_B3 also includes a low-inductance module design, which minimizes switching noise and electromagnetic interference (EMI), ensuring smooth system operation.

Technical Specifications:

• IGBT Technology: IGBT3
• Collector-Emitter Voltage (Vces): 1200V
• Continuous Collector Current (Ic): 100A (at 25°C)
• Power Dissipation: 510W
• Gate Threshold Voltage (Vge): ±20V
• Operating Junction Temperature: -40°C to +150°C
• Isolation Voltage: 4 kV (AC, 1 minute)
• Switching Frequency: 1 to 20 kHz
• Package Type: EconoPACK™
• Dimensions: 106 x 62 x 17 mm