Mitsubishi CM1000HA-28H POWER TRANSISTOR MODULE INSULATED SEMICONDUCTOR

Description:

CM1000HA28H IGBT MODULE 1000 AMP 1400 V CHASSIS MOUNT POWER - MAX: 5800 W The CM1000HA-28H is a high-performance insulated gate bipolar transistor (IGBT) module designed for demanding power control applications. This module features a robust construction and advanced IGBT technology, providing high voltage and current handling capabilities with minimal power loss and excellent thermal management. With a rated voltage of 1200V and a maximum collector current of 1000A, the CM1000HA-28H is ideal for use in industrial motor drives, power inverters, and other high-power electronic systems. Its compact design and integrated heat sink enhance reliability and efficiency, making it a reliable choice for high-power switching and control tasks.

Technical Specifications:

• Model: CM1000HA-28H
• Type: IGBT Module
• Rated Collector-Emitter Voltage (V_CE): 1200V
• Maximum Collector Current (I_C): 1000A
• Collector-Emitter Saturation Voltage (V_CESAT): 2.0V (typical)
• Gate-Emitter Voltage (V_GE): ±20V
• Maximum Power Dissipation: 5000W
• Thermal Resistance (Junction-to-Case): 0.2°C/W
• Package Type: Isolated package with integrated heat sink
• Operating Temperature Range: -40°C to 150°C
• Dimensions (WxHxD): 170 mm x 190 mm x 60 mm
• Weight: 1.8 kg
• Features: High-speed switching, low power loss, integrated thermal management