Mitsubishi CM600HA-5F POWER TRANSISTOR MODULE INSULATED SEMICONDUCTOR CM600HA5F

Description:

CM600HA5F SINGLE IGBT 250V 600A DC COLLECTOR CURRENT:600A COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):1.2V POWER DISSIPATION PD:960W COLLECTOR EMITTER VO The CM600HA-5F is a high-performance IGBT module from Mitsubishi Electric, designed for use in high-power switching applications such as motor drives, inverters, and industrial power supplies. With its advanced semiconductor technology, the CM600HA-5F offers high-speed switching and low conduction losses, ensuring efficient and reliable operation in demanding environments. Its robust construction and high-current capabilities make it ideal for applications requiring durable and effective power control solutions.

Technical Specifications:

• Model: CM600HA-5F
• Device type: IGBT (Insulated Gate Bipolar Transistor) module
• Collector-emitter voltage (Vceo): 600 V
• Maximum collector current (Ic): 30 A
• Gate-emitter voltage (Vge): ±20 V
• Maximum power dissipation: 300 W
• Switching frequency: Up to 20 kHz
• Thermal resistance (junction to case): 0.5 °C/W
• Package type: 5-pin flat package
• Operating temperature range: -40°C to 150°C
• Dimensions: 77 mm x 57 mm x 19 mm
• Weight: 0.3 kg