Toshiba MG300N1FK2 IGBT Power Module Silicon N Channel

Description:

The Toshiba MG300N1FK2 IGBT Power Module is used in industrial power conversion and motor drive systems to provide high-current, high-voltage switching for variable frequency drives, inverters, and industrial power supplies. Commonly installed in AC motor drives, servo amplifiers, welding equipment, UPS systems, induction heating equipment, and OEM automation machinery requiring a 300 A, 1200 V insulated gate bipolar transistor (IGBT) power module. Maintenance teams, OEMs, and system integrators use this module for replacement of failed power modules, inverter repairs, drive maintenance, and industrial automation retrofits.

Applications:

The Toshiba MG300N1FK2 is widely used in variable frequency drives (VFDs), servo drive systems, industrial inverters, uninterruptible power supplies (UPS), renewable energy converters, induction heating equipment, welding power supplies, and heavy-duty factory automation systems where efficient high-power switching and reliable motor control are essential.

Technical Specifications:

• Manufacturer Part Number (MPN): MG300N1FK2
• Brand: Toshiba
• Product Type: IGBT Power Module
• Module Configuration: Dual IGBT Half-Bridge Module
• IGBT Technology: Silicon N-Channel
• Collector-Emitter Voltage (VCES): 1200 V
• DC Collector Current (IC): 300 A
• Pulse Collector Current (ICP): 600 A
• Gate-Emitter Voltage (VGES): ±20 V
• Isolation Voltage: 2500 VAC (1 Minute)
• Package Type: Isolated Power Module
• Mounting Type: Chassis Mount
• Operating Junction Temperature: -40°C to +150°C
• Application: Variable Frequency Drives, Industrial Inverters, Servo Drives, and High-Power Switching Systems

Common Replacements:

• Toshiba MG300Q1US41
• Toshiba MG300Q2YS40
• Toshiba MG300J2YS50