Toshiba TG17179 GaN HEMT Microwave Transistor

The Toshiba TG17179 GaN HEMT Microwave Transistor is a 40 V GaN High Electron Mobility Transistor packaged as a Ceramic Flanged RF device for flange-mount install, designed for high-frequency RF power amplifier systems and delivering high-efficiency microwave power amplification. Part of the 60LHA series, it is commonly used in L-band microwave transmitters, radar power amplifiers, RF test equipment, satellite communication systems, and OEM microwave assemblies that require a GaN HEMT with a 40 V drain-source rating. Key specifications include Manufacturer Part Number TG17179 with secondary numbers 39745022 and 9F3E1926, brand Toshiba, and country of manufacture Japan; Drain-Source Operating Voltage (VDS) 40 V; Frequency Range: Microwave Band (application dependent); Mounting Type: Flange Mount; Package Type: Ceramic Flanged RF Package. Applications span military radar systems, microwave communications equipment, RF power amplifiers, satellite uplink transmitters, electronic countermeasure (ECM) systems, avionics, RF laboratory equipment, and other industrial microwave uses where high output power and GaN technology are advantageous. Maintenance teams, RF engineers, and OEM system integrators use this device for replacement of failed RF power transistors and integration into high-power RF systems.