TOSHIBA TG17179 MICROWAVE SEMICONDUCTOR GAN HEMT 60LHA VDS=40V 39745022 9F3E1926

Description:

The Toshiba TG17179 Microwave Power Transistor 60LHA GaN HEMT is used in high-frequency RF power amplifier systems to deliver high-efficiency microwave power amplification for radar, satellite communications, electronic warfare, and defense applications. Commonly installed in L-band microwave transmitters, radar power amplifiers, RF test equipment, satellite communication systems, and OEM microwave assemblies requiring a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) with a 40 V drain-source operating voltage. Maintenance teams, RF engineers, and OEM system integrators use this device for replacement of failed RF power transistors, microwave amplifier repairs, defense electronics maintenance, and high-power RF system integration. 

Applications:

The Toshiba TG17179 is widely used in military radar systems, microwave communication equipment, RF power amplifiers, satellite uplink transmitters, electronic countermeasure (ECM) systems, avionics, RF laboratory equipment, and industrial microwave applications where high output power, excellent power-added efficiency, and wideband GaN technology are required for continuous high-frequency operation. 

Technical Specifications:

• Manufacturer Part Number (MPN): TG17179
• Secondary Part Numbers: 39745022, 9F3E1926
• Brand: Toshiba
• Product Type: Microwave Power GaN HEMT
• Semiconductor Technology: Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT)
• Series: 60LHA
• Drain-Source Operating Voltage (VDS): 40 V
• Device Function: RF / Microwave Power Amplifier Transistor
• Frequency Range: Microwave Band (Application Dependent)
• Package Type: Ceramic Flanged RF Package
• Mounting Type: Flange Mount
• Application: Radar, Satellite Communications, RF Power Amplifiers, and Defense Electronics
• Country of Manufacture: Japan

Common Replacements:

• Toshiba TGI17179-60LHA
• Toshiba TGI5867-60LHA
• Toshiba TGI7785-60LHA